Electrodeposition of CuIn1−xGaxSe2 precursor films: optimization of film composition and morphology
Source abstract
Abstract
Abstract In this paper, we report the preparation of CuIn 1− x Ga x Se 2 (CIGS) films using electrodeposition. The influence of individual salt concentration on film composition is discussed in detail. We observed that CuCl 2 and H 2 SeO 3 in the deposition bath strongly influence the film composition compared to GaCl 3 and InCl 3 salts. The deposited film morphology was also strongly influenced by the film composition. We also observed microcracks in the films when the films were deposited at low concentrations of CuCl 2 , InCl 3 , and GaCl 3 salts and at high concentrations of H 2 SeO 3 .
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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