journal article·2003-05

Structural and chemical interface characterization of CdTe solar cells by transmission electron microscopy

M. Terheggen, H. Heinrich, G. Kostorz, A. Romeo, D. Baetzner, A.N. Tiwari, A. Bosio, N. Romeo

Thin Solid Films· Volume 431-432
Publisher page

Abstract

Abstract CdTe/CdS thin film solar cells have been grown by high-vacuum evaporation (HVE) and close-space sublimation. To understand the role of Cl on the microstructure and composition of the CdTe/CdS layers and interfaces, the cells were annealed for different durations after different amounts of CdCl 2 had been deposited. Transmission electron microscopy shows a loss of orientational relationship between CdTe and CdS after annealing under the influence of Cl. The interdiffusion of S and Te across the interface is measured quantitatively and segregation of Cl, Te and O at the CdTe/CdS interface is detected by energy-dispersive X-ray mapping in the electron microscope. The results show a strong correlation with the diffusion of Cl along the CdTe grain boundaries, which is directly proved for the first time. It is suggested that recrystallization of CdTe grains starts from the CdTe surface and proceeds towards the interface. Cells grown by HVE show all the features expected from the predominance of recrystallization.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (6)

Show source-provided references
1. M. Harr, D. Bonnet, in: R. McNelis, W. Pals, H. Ossenbrink, P. Helm (Eds.), Proceedings of the 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, Germany, October 22–26, 2001, p. 1001
2. Durose · J. Crystal Growth · 1999 · 197 · 73310.1016/S0022-0248(98)00962-2 ↗
3. Agostinelli · Thin Solid Films · 2003 · 431–432 · 40710.1016/S0040-6090(03)00263-3 ↗
4. Moutinho · J. Vac. Sci. Technol. A · 1998 · 16 · 125110.1116/1.581269 ↗
5. Lane · J. Crystal Growth · 1999 · 197 · 74310.1016/S0022-0248(98)00813-6 ↗
6. B.E. McCandless, in: R. Noufi, R.W. Birkmire, D. Lincot, H.W. Schock (Eds.), II–VI Compound Semiconductor Photovoltaic Materials, San Francisco, USA, April 16–20, 2001, Mater. Res. Soc. Symp. Proc. 668 (2001) H1.6.1