Photoluminescence properties of ion beam synthesized β-FeSi2
Source abstract
Abstract
Effects of structural changes near the interface, the implantation dose and the precipitate morphology on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 have been investigated. The intrinsic PL spectrum attributed to the interband transition of β-FeSi2 was found by examining the dependence of the PL peak energy on temperature and the excitation power.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Ion-surface interactions and analysis
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