article·2006-12-21

Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

Kuan-Hsun Chiu, Jiann-Heng Chen, Hongren Chen, Ruey‐Shing Huang

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Abstract

This work studies the relationship between the deposition process parameters and the properties of sputtered c-axis-oriented aluminum nitride (AlN) thin films. AlN films were deposited on a Pt electrode by reactive magnetron sputtering under various deposition conditions. The films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). A polycrystalline AlN film with highly c-axis-preferred orientation was achieved. The XRD rocking curve was 2.7°. The FESEM photographs also show that the AlN film has a dense hexagonal surface texture with uniform grain size and a highly ordered column structure.
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Research context

OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics

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