article·2001-07-01

Chemical vapor deposition of nickel oxide films from Ni(C5H5)2/O2

Jin‐Kyu Kang, Shi‐Woo Rhee

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Abstract

Nickel oxide films were deposited with Ni(C5H5)2(bis-cyclopentadienyl nickel)/O2 at various temperatures and O2 flow rates. Gas phase reaction of Ni(C5H5)2/O2 was observed above the temperature of 300°C and a peak from CO2, the product of the Ni(C5H5)2 oxidation, was observed. Pure oxide films were not obtained but a mixed phase of nickel, NiO and Ni2O3 was observed and the amount of each phase in the film depended on the deposition condition. Films deposited at a high deposition temperature region (>275°C) had a high nickel content, and NiO(111) preferred crystal orientation. Films deposited at a low deposition temperature region (<275°C) had low nickel content and NiO(200) preferred orientation.
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OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Thin-Film Transistor Technologies

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