Optimization of chemical bath deposited CdS thin films using nitrilotriacetic acid as a complexing agent
Source abstract
Abstract
Abstract We report a design of experiment approach for the optimization of CdS thin films grown by chemical bath deposition using nitrilotriacetic acid (NTA) as a complexing agent. With the help of this approach, we developed a set of experiments that enabled us to maximize the growth rate. In comparison with works reported earlier, a much faster growth rate is achieved. Two different cadmium precursors; CdSO4 and CdCl2 were used in this work. Only NTA was used as a ligand for all films deposited on transparent conducting oxide coated soda lime glass substrates. CdS films deposited on quartz glass using only NTA peeled off, and became patchy. However, with the addition of hydrazine monohydrate, high quality CdS films were obtained on quartz glass.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
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