Sol–gel deposition and characterization of Mn2+-doped silicate phosphor films

Abstract Mn2+-doped Zn2SiO4 and Mg2Gd8(SiO4)6O2 phosphor films were deposited on silicon and quartz glass substrates by sol–gel process (dip-coating). The variations of sol viscosity with time and film thickness with the number of layers were investigated in Zn2SiO4: Mn system. The results of XRD and IR showed that the Zn2SiO4: Mn films remained amorphous below 700°C and crystallized completely around 1000°C. From AFM studies, it was observed that the grains with 0.5–0.8 μm size packed closely in Zn2SiO4: Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4: Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were discussed in detail by a comparison with those of Mn2+ (and Pb2+)-doped Mg2Gd8(SiO4)6O2 phosphor films.