Cu2O thin films deposited by reactive direct current magnetron sputtering

Abstract The Cu 2 O thin films were prepared on quartz substrate by reactive direct current magnetron sputtering. The influences of oxygen partial pressure and gas flow rate on the structures and properties of deposited films were investigated. Varying oxygen partial pressure leads to the synthesis of Cu 2 O, Cu 4 O 3 and CuO with different microstructures. At a constant oxygen partial pressure of 6.6 × 10 − 2 Pa, the single Cu 2 O films can be obtained when the gas flow rate is below 80 sccm. The as-deposited Cu 2 O thin films have a very high absorption in the visible region resulting in the visible-light induced photocatalytic activity.