Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition
Source abstract
Abstract
Abstract Growth characteristics and optical properties of ZnO films epitaxially grown on Al2O3 (0 0 0 1) substrates at temperatures of Tg=200–500 °C by metalorganic chemical vapor deposition were investigated. The in-plane orientation of ZnO unit cells was different for Tg=200 °C and Tg⩾300 °C. The surface morphology varied significantly: smooth surface with cracks at Tg⩽250 °C, facet and column growth at 300 °C⩽Tg
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
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