article·2004-08-05

Structural and optical studies on thermal-annealed In2S3 films prepared by the chemical bath deposition technique

M.G. Sandoval-Paz, M. Sotelo-Lerma, J.J. Valenzuela-Jáuregui, M. Flores-Acosta, R. Ramírez‐Bon

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Abstract

Abstract Polycrystalline In 2 S 3 films were grown on glass substrates by means of the chemical bath method and subsequently thermal-annealed in an Ar atmosphere at temperatures from 200 to 450 °C. The optical and structural properties of the films were studied as a function of the annealing temperature. The experimental results show that the as-deposited films are composed by a mixture of both cubic α and β crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal β one and a crystalline reorientation of the latter phase. Two energy band gaps were determined for all the films: one indirect and other direct at higher energy. The structural modifications of the films are accompanied by changes in the two energy band gaps of the films.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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