Metal-induced crystallization of amorphous silicon

Abstract We studied the Ni-silicide mediated crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of an electric field. The NiSi2 precipitates were formed at temperatures less than 400°C and act as nuclei sites in the initial stage of thermal annealing. Needlelike Si crystallites are grown as a result of the migration of NiSi2 precipitates in the a-Si:H network. The crystallization speed of the a-Si:H is greatly enhanced in an electric field and thus crystallization temperature is lowered. The a-Si:H was fully crystallized at 500°C within 10 min. A poly-Si TFT using the Ni-SMC poly-Si exhibited a field effect mobility of 120 cm2/Vs, a threshold voltage of −1.5 V and a sub-threshold slope of 0.5 V/dec.