Fabrication of ZnO thin film diode using laser annealing
Source abstract
Abstract
Abstract A p–n homojunction was obtained by Nd:YAG laser annealing of Zn 3 P 2 /n-ZnO thin film. The deposition process of ZnO and Zn 3 P 2 thin film was performed by pulsed laser deposition (PLD). A p–n junction was formed by Nd:YAG laser annealing of Zn 3 P 2 /n-ZnO thin film and showed typical I – V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
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