Atomic layer epitaxy

Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals. It is based on the saturation of individual, sequentially performed surface reactions between the substrate and each of the reactants needed. The saturation mechanism of ALE sequences results in an inherent elimination of pinholes, conformal coating characteristics as well as in a thickness uniformity and homogeneity of the thin films produced. ALE is also an effective tool in a precise construction of superlattices, superalloys, tailored molecular structures and interface layers.