A study on MoSe2 layer of Mo contact in Cu(In,Ga)Se2 thin film solar cells

Abstract This study investigated the influence of sputtering power and selenization on the thickness of the MoSe 2 , as it relates to the performance of Cu(In,Ga)Se 2 (CIGS) thin film solar cells with a structure of glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al. When the sputtering power exceeded 200 W (power density of 4.4 W/mm 2 ) or the selenization temperature exceeded 773 K, the MoSe 2 layer underwent a significant increase in thickness. The use of higher sputtering power to deposit the Mo contact resulted in superior Mo crystals and facilitated the formation of MoSe 2 layers with hexagonal close-packed crystal structure during the selenization process. The thickness of the MoSe 2 layer did not increase with soaking time during selenization. The highest device efficiency was obtained when the thickness of the MoSe 2 layer was 240 nm.