Physical and electrical characterization of high-performance Cu 2 ZnSnSe 4 based thin film solar cells

Abstract We report on the electrical, optical and physical properties of Cu 2 ZnSnSe 4 solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu 10 Sn 90 multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm 2 , an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current–voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact.