Novel transparent conducting oxide: Anatase Ti1−xNbxO2

Abstract Single-crystalline Ti 1− x Nb x O 2 ( x = 0.2) films of 40 nm thickness were deposited on SrTiO 3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti 1− x Nb x O 2 films with x ≥ 0.03 is 2–3 × 10 − 4 Ω cm at room temperature. The carrier density of Ti 1− x Nb x O 2 , which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 10 19 to 2 × 10 21 cm − 3 . Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti 1− x Nb x O 2 is one of the promising candidates for the practical TCOs.