Time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells

Abstract Room temperature time-resolved photoluminescence (TR-PL) measurements have been performed on Cu(In,Ga)Se2 (CIGS) thin films and solar cells to clarify the recombination process of the photo-generated minority carrier. Both films and solar cells exhibited PL decay curves composed of the dominant fast (0.7–2 ns) and weak slow (3–10 ns) exponential decay curves. PL lifetime of the cell is longer than that of the thin films, indicating the longer minority carrier lifetime for the hetero-structures than in thin films. The increase of PL lifetime is consistent with the enhancement of the PL intensity and the elimination of defect-related PL as a result of the solar cell formation. These results are discussed in terms of the recombination process of carriers in films and hetero-structures. The relationship between the PL lifetime of the CIGS solar cells and the cell conversion efficiency is described.