Dielectric modeling of transmittance spectra of thin ZnO:Al films

Abstract A dielectric model comprising band gap transitions and free electron excitations (Drude model) is successfully applied to simulate transmittance spectra of ZnO films doped with 0.5%, 1% and 2% Al. The Drude formula contains a frequency-dependent damping term in order to get a good fit in the visible spectral region. Useful physical parameters obtained from the fit are electron density and mobility within the grains, film thickness, band gap and refractive index. The optically determined film thickness agrees with that obtained with the stylus method within 2%. The optically determined electronic parameters are compared with those obtained by electrical measurements. Contrary to thin In 2 O 3 :Sn films, the Drude mobility inside the grains is similar to the direct current Hall mobility indicating more perfect film growth without forming pronounced grain boundaries. Maximum value is 35 cm 2 /V s. The effective electron mass is estimated to be about 0.6 of the free electron mass. The refractive index at 550 nm decreases with increasing electron density.