journal article·2014-10

Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy

Dominik M. Berg, Monika Arasimowicz, Rabie Djemour, Levent Gütay, Susanne Siebentritt, Susan Schorr, Xavier Fontané, Victor Izquierdo-Roca, Alejandro Pérez-Rodriguez, Phillip J. Dale

Thin Solid Films· Volume 569
Publisher page

Abstract

Abstract The formation of single-phase Cu2ZnSnS4 thin films is known to be challenging, mainly due to the difficulties to detect secondary phases in the Cu2ZnSnS4 system. Here, the ability to quantitatively discriminate the most likely secondary phases ZnS and Cu2SnS3 from Cu2ZnSnS4 using common approaches but also using more complex and time-consuming Rietveld refinement analysis techniques to analyse X-ray diffractograms is investigated in a comparative study to the peak analysis of Raman spectra measured with standard conditions. In studying not only individual samples of the respective phases but also a phase-gradient sample containing various amounts of Cu2SnS3 and ZnS alongside Cu2ZnSnS4, we found that refinement analyses can only discriminate more than 10% ZnS and 50% Cu2SnS3 from Cu2ZnSnS4, respectively. In comparison, Raman measurements performed with green-wavelength excitation can discern more than 30% Cu2SnS3 from Cu2ZnSnS4 while ZnS is indiscernible. The results show that the identification of secondary phases in the Cu2ZnSnS4 system is more difficult than currently assumed in literature. Furthermore, the potential of multiple-wavelength Raman spectroscopy as a tool to identify ZnS secondary phases is shown. Characterization of a Sn-rich sample (composition nearly Cu2ZnSn3S8) shows no sign of a Sn-rich quaternary phase, questioning its existence under typical annealing conditions.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (37)

Show source-provided references
1. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency10.1002/aenm.201301465 ↗
2. New world record efficiency for Cu(In, Ga)Se2 thin-film solar cells beyond 20%10.1002/pip.1078 ↗
3. Direct evidence of current blocking by ZnSe in Cu2ZnSnSe4 solar cells10.1063/1.4706256 ↗
4. HCl and Br2–MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers10.1016/j.tsf.2012.12.095 ↗
5. Phase equilibria in the Cu2S–ZnS–SnS2 system10.1016/j.jallcom.2003.08.084 ↗
6. In-depth resolved Raman scattering analysis for the identification of secondary phases: characterization of Cu2ZnSnS4 layers for solar cell applications10.1063/1.3587614 ↗
7. Precursors' order effect on the properties of sulfurized Cu2ZnSnS4 thin film10.1088/0268-1242/24/10/105013 ↗
8. Study of polycrystalline Cu2ZnSnS4 films by Raman scattering10.1016/j.jallcom.2011.04.097 ↗
9. The path towards a high-performance solution-processed kesterite solar cell10.1016/j.solmat.2010.11.028 ↗
10. Towards sustainable materials for solar energy conversion: preparation and photoelectrochemical characterization of Cu2ZnSnS410.1016/j.elecom.2008.02.008 ↗
11. Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route10.1016/j.tsf.2008.11.022 ↗
12. A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers10.1016/j.jelechem.2010.01.008 ↗
13. Formation of Cu2ZnSnS4 and Cu2ZnSnS4–CuInS2 thin films investigated by in-situ energy dispersive X-ray diffraction10.1557/PROC-1012-Y03-35 ↗
14. Texture inheritance in thin-film growth of Cu2ZnSnS410.1063/1.3192357 ↗
15. On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum10.1063/1.3273495 ↗
16. A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors10.1088/0022-3727/43/21/215403 ↗
17. CuxSnSx+1 (x=2, 3) thin films grown by sulfurization of metallic precursors deposited by dc magnetron sputtering
18. The consequences of kesterite equilibria for efficient solar cells10.1021/ja111713g ↗
19. Software FullProf
20. Raman effect in wurtzite- and zinc-blende-type ZnS single crystals10.1103/PhysRev.171.931 ↗
21. Raman spectrum of cubic ZnS10.1103/PhysRev.182.838 ↗
22. Microstructure and secondary phases in coevaporated CuInS2 films: dependence on growth temperature and chemical composition10.1116/1.1329123 ↗
23. Raman and resonance Raman investigation of MoS2 nanoparticles10.1103/PhysRevB.60.2883 ↗
24. Landold · 2000
25. Raman analysis of monoclinic Cu2SnS3 thin films10.1063/1.4712623 ↗
26. Cu2Zn1−xCdxSn(Se1−ySy)4 solid solutions as absorber materials for solar cells10.1002/pssa.200776839 ↗
27. Fernandes · 2008 · 2519
28. Far infrared studies on stannite and wurtzstannite type compounds10.1016/0584-8539(91)80283-O ↗
29. Growth of Cu2ZnSnS4 thin films using sulfurization of stacked metallic film10.1016/j.tsf.2010.03.058 ↗
30. Vibrational properties of stannite and kesterite type compounds: Raman scattering analysis of Cu2(Fe, Zn)SnS410.1016/j.jallcom.2012.06.042 ↗
31. The vibrational properties study of kesterite Cu2ZnSnS4 single crystals by using polarization dependent Raman spectroscopy10.1016/j.optmat.2012.09.031 ↗
32. Characterization of vibrational and mechanical properties of quaternary compounds Cu2ZnSnS4 and Cu2ZnSnSe4 in kesterite and stannite structures10.1103/PhysRevB.84.205201 ↗
33. The influence of the composition ratio on CZTS-based thin film solar cells10.1557/PROC-1165-M04-01 ↗
34. Quantitative phase analysis by X-ray diffraction of multiphased binary alloy coatings: application to brass coating10.1107/S0021889896003615 ↗
35. Low incidence X-ray goniometry for thin films texture analysis
36. Direct synthesis of single-phase p-type SnS by electrodeposition from a dicyanamide ionic liquid at high temperature for thin film solar cells10.1021/jp311552g ↗
37. Atmospheric pressure chemical vapor deposition of tin sulfides (SnS, Sn2S3, and SnS2) on glass10.1021/cm990005z ↗