Effect of residual stresses on mechanical properties and interface adhesion strength of SiN thin films
Source abstract
Abstract
Abstract Residual stresses play a significant role in the mechanical reliability of thin films. Thus in this study, the mechanical properties and interface adhesion strengths of SiN thin films containing different residual stresses have been investigated by using nanoindentation and nanoscratch tests. With varied residual stresses from compressive to tensile, the penetration depth of nanoindentation tests shifted to a higher value. The hardness and elastic modulus decreased from 11.0 and 95 GPa, respectively, for the film containing a compressive stress of 235 MPa to 9.6 and 84 GPa for the film with a tensile stress of 86 MPa. With decreasing compressive stress and increasing tensile stress, the interface adhesion energy decreased from 1.8 to 1.5 J/m2. Compressive stresses were expected to blunt crack tips and inhibit crack propagation, while tensile stresses enlarged crack opening and facilitated crack propagation, thus changing the mechanical properties of the SiN thin films.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. Freund · 2003
2. Moon · J. Mech. Phys. Solids · 2002 · 50 · 235510.1016/S0022-5096(02)00034-0 ↗
3. Lee · Acta Mater. · 2004 · 52 · 208110.1016/j.actamat.2004.01.003 ↗
4. Oliver · J. Mater. Res. · 1992 · 7 · 156410.1557/JMR.1992.1564 ↗
5. Fischer-Cripps · 2002
6. Volinsky · Acta Mater. · 2002 · 50 · 44110.1016/S1359-6454(01)00354-8 ↗
7. Volinsky · Thin Solid Films · 2003 · 429 · 20110.1016/S0040-6090(03)00406-1 ↗
8. Bull · J. Phys. D: Appl. Phys. · 2005 · 38 · R39310.1088/0022-3727/38/24/R01 ↗
9. Malzbender · Mater. Sci. Eng. R · 2002 · 36 · 4710.1016/S0927-796X(01)00040-7 ↗
10. Chang · Microelectron. Eng. · 2007 · 84 · 31910.1016/j.mee.2006.10.086 ↗
11. Chang · J. Electrochem. Soc. · 2007 · 154 · D24110.1149/1.2437050 ↗
12. Bull · Surf. Coat. Technol. · 1990 · 42 · 15110.1016/0257-8972(90)90121-R ↗
13. Bull · Surf. Coat. Technol. · 1991 · 50 · 2510.1016/0257-8972(91)90188-3 ↗
14. Chang · Thin Solid Films · 2004 · 460 · 16710.1016/j.tsf.2004.01.074 ↗
15. Kattamis · Surf. Coat. Technol. · 1994 · 70 · 4310.1016/0257-8972(94)90073-6 ↗
16. Taylor · Thin Solid Films · 2003 · 429 · 19010.1016/S0040-6090(03)00276-1 ↗
17. Suresh · Acta Mater. · 1998 · 46 · 575510.1016/S1359-6454(98)00226-2 ↗
18. Lee · Script. Mater. · 2003 · 49 · 45910.1016/S1359-6462(03)00290-2 ↗
19. Lee · Script. Mater. · 2004 · 50 · 119310.1016/j.scriptamat.2004.02.009 ↗
20. Cullity · 1978 · 81
21. Courtney · 1990
22. Bertrana · Diamond Relat. Mater. · 2001 · 10 · 111510.1016/S0925-9635(00)00430-1 ↗
23. Saha · Acta Mater. · 2002 · 50 · 2310.1016/S1359-6454(01)00328-7 ↗
24. Shen · Microelectron. Eng. · 2003 · 70 · 11510.1016/S0167-9317(03)00413-1 ↗
25. Akimune · J. Mater. Sci. · 1994 · 29 · 324310.1007/BF00356670 ↗