Electrochemical deposition of SnS thin films

Abstract SnS has a bandgap around 1.0–1.3 eV and the p-type conductivity, and therefore is suitable for the absorption layer in solar cells. In this study, Sn was deposited onto In2O3-coated glass substrates by electrochemical deposition from aqueous solutions and characterized chemically, structurally, and optically. The deposition bath contained SnSO4 and Na2S2O3. The deposited SnS was polycrystalline and of orthorhombic structure, and its composition was slightly Sn-rich. The direct bandgap was estimated to be 1.3 eV from optical transmission spectra. The relationship between the film properties and the deposition parameters was investigated to optimize the deposition condition.