Growth of Cu2ZnSnS4 thin films using sulfurization of stacked metallic films

Abstract We fabricated Cu 2 ZnSnS 4 (CZTS) thin films through sulfurization of stacked metallic films. Three types of Cu–Zn–Sn metallic films, i.e., Cu-rich, Cu-correct and Cu-poor precursor films were sputtered onto Mo-coated glass. The sulfurization of stacked Cu–Zn–Sn alloy films was performed at a relatively high temperature, 570 °C, with S-powder evaporation. CZTS films from Cu-rich and Cu-correct precursors showed a Cu 2 − x S phase on the film surface, while CZTS films from Cu-poor precursors didn't show the Cu 2 − x S phase. However, all films didn't exhibit any extra secondary phase and exhibited good crystalline textures even with Cu-ratio differences in metallic precursor films. Fabricated CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and Raman scattering measurements. SEM cross-section images of CZTS films showed that Cu-poor CZTS films were grown with more smooth film surface compared with other types of CZTS films.