article·1988-09-01

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu, Norikatsu Koide, Nobuhiko Sawaki

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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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