Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

Abstract β-Ga 2 O 3 is a unique oxide that exhibits deep ultraviolet transparency as well as good electric conductivity when dopants are introduced. With the purpose of realizing highly conductive films using this material, tin doped Ga 2 O 3 films were deposited on Al 2 O 3 (0001) substrates by the pulsed laser deposition method. (201) oriented β-phase films were grown at substrate temperatures of between 380 °C and 435 °C, and deep ultraviolet transparent films with a conductivity as high as 8.2 S cm −1 were obtained at 380 °C under laser ablation with a low repetition rate of 1 Hz. With a further increase in the deposition temperature, the films underwent a crystalline phase transition, accompanied by an abrupt decrease in conductivity.