Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition

Abstract High-quality transparent conductive gallium-doped ZnO (GZO) thin films were deposited on quartz glass substrates using pulsed laser deposition. The structure and electrical and optical properties of the as-grown GZO films were mainly investigated. In X-ray diffraction, (002) and (004) peaks were detected, indicating that Ga doping did not cause structural degradation of wurtzite ZnO. The chemical state of GZO films was investigated by X-ray photoelectron spectroscopy. The GZO films formed at a substrate temperature of 300°C showed a low electrical resistivity of 8.12 × 10− 5 Ω cm, a carrier concentration of 1.46 × 1022 cm− 3 and a carrier mobility of 30.96 cm2/Vs at an oxygen pressure of 0.67 Pa. A visible transmittance of above 90% was obtained.