Preparation of conductive and transparent ITO film by sol-gel technique

The ITO film was prepared using In(NO_3)_3·4.5H_2O as the primary material and acetylacetone as the solvent,adding SnCl_4·5H_2O with the mol ratio In:Sn was 10∶1,using quartz glasses as the substrates.comparing with the existing techniques,the samples in this paper were annealed at(500 ℃) after each dip-coating, cycling for 5 times.The samples′ thickness,morphology structure and performance of conductive and transparent were tested by surface profile ceremony(SPC),atomic force spectrometry(AFM),X-ray diffraction(XRD),UV-Vis spectrophotometer and four-point-probe ceremony.The experimental results show that the ITO films prepared by this method have good conductivity and high transmittance in the range of visible light with a resistivity of(5.625×10~(-3) Ω·cm) and a transmittance of 90%～95%.