journal article·2015-06-09

Kinetically Controlled Site-Specific Substitutions in Higher-Order Heterostructures

Devin R. Merrill, Duncan R. Sutherland, Jeffrey Ditto, Sage R. Bauers, Matthias Falmbigl, Douglas L. Medlin, David C. Johnson

Chemistry of Materials· Volume 27· Issue 11
Publisher page

Abstract

Targeted substitutions in extended solids have been historically challenging, limited by high temperature and the synthetic routes traditionally used. Here, we report the synthesis of new compounds in the (Pb x Sn 1– x Se) 1+δ TiSe 2 intergrowth family from designed amorphous precursors. By controlling local composition and using low reaction temperatures, the metastable quaternary compounds can be synthesized over the entire range of 0 ≤ x ≤ 1 as crystallographically aligned thin films. X-ray diffraction and electron microscopy confirm the formation of a solid solution in the Pb x Sn 1– x Se layer, with the overall and constituent structure both changing as a function of composition as predicted by Vegard’s law. Charge transfer between constituents and subsequent conduction in the TiSe 2 describes the observed transport properties. The mobility of the charge carriers is increased in compounds with the alloyed Pb x Sn 1– x Se layer, providing direct evidence that charge transport occurs predominantly in the dichalcogenide layer.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Materials Science Institute, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, United States

Sandia National Laboratories, Energy Nanomaterials Department, Livermore, California 94551 United States

Funding

Division of Materials Research · National Nuclear Security Administration · Division of Chemistry

References (34)

Show source-provided references
1. Snyder G. J. · Nat. Mater. · 2008 · 7 · 10510.1038/nmat2090 ↗
2. Stewart G. R. · Rev. Mod. Phys. · 2011 · 83 · 158910.1103/RevModPhys.83.1589 ↗
3. Orenstein J. · Science · 2000 · 288 · 46810.1126/science.288.5465.468 ↗
4. Havinga E. E. · J. Phys. Chem. Solids · 1970 · 31 · 265310.1016/0022-3697(70)90261-1 ↗
5. Pickett W. E. · Phys. Rev. B · 1996 · 53 · 114610.1103/PhysRevB.53.1146 ↗
6. Li C. · Phys. Rev. B · 2013 · 88 · 01410910.1103/PhysRevB.88.014109 ↗
7. Wolf, S.; Tauber, R. N.Silicon Processing for the VLSI Era: Process Technology,2nded.Lattice Press:Sunset Beach, CA, 2000; Vol.1, pp1–32.
8. Park J.-S. · Appl. Phys. Lett. · 2014 · 105 · 24390110.1063/1.4904223 ↗
9. Cahen D. · Chem. Mater. · 1989 · 1 · 20210.1021/cm00002a008 ↗
10. Chen S. · Adv. Mater. · 2013 · 25 · 152210.1002/adma.201203146 ↗
11. Wiegers G. A. · Prog. Solid State Chem. · 1996 · 24 · 110.1016/0079-6786(95)00007-0 ↗
12. Schafer H. · 1964
13. Atkins R. · Chem. Mater. · 2012 · 24 · 459410.1021/cm302948x ↗
14. Heideman C. · J. Solid State Chem. · 2008 · 181 · 170110.1016/j.jssc.2008.06.017 ↗
15. Heideman C. L. · J. Am. Chem. Soc. · 2013 · 135 · 1105510.1021/ja402819q ↗
16. Westover R. · Chem. Mater. · 2014 · 26 · 344310.1021/cm500720x ↗
17. Wiegers G. a. · J. Alloys Compd. · 1995 · 219 · 15210.1016/0925-8388(94)05004-X ↗
18. Rouxel J. · J. Alloys Compd. · 1995 · 229 · 14410.1016/0925-8388(95)01680-5 ↗
19. Meerschaut A. · Curr. Opin. Solid State Mater. Sci. · 1996 · 1 · 25010.1016/S1359-0286(96)80092-1 ↗
20. Phung T. · X-Ray Spectrom. · 2008 · 37 · 60810.1002/xrs.1102 ↗
21. Schaffer M. · Ultramicroscopy · 2012 · 114 · 6210.1016/j.ultramic.2012.01.005 ↗
22. van der Pauw L. J. · Philips Res. Rep. · 1958 · 13 · 1
23. van der Pauw L. J. · Philips Technol. Rev. · 1958 · 20 · 220
24. Moore D. B. · Emerging Mater. Res. · 2012 · 1 · 29210.1680/emr.12.00024 ↗
25. Merrill D. R. · Eur. J. Inorg. Chem. · 2015 · 8310.1002/ejic.201402814 ↗
26. Vegard L. · Z. Phys. · 1921 · 5 · 1710.1007/BF01349680 ↗
27. Greenaway D. L. · J. Phys. Chem. Solids · 1965 · 26 · 144510.1016/0022-3697(65)90043-0 ↗
28. Giang N. · Phys. Rev. B · 2010 · 82 · 110.1103/PhysRevB.82.024503 ↗
29. Moore D. B. · Chem. Mater. · 2013 · 25 · 240410.1021/cm400090f ↗
30. Corso S. D. · J. Phase Equilib. · 1995 · 16 · 30810.1007/BF02645286 ↗
31. Wiegers G. · Eur. J. Solid State Inorg. Chem. · 1991 · 28 · 1071
32. Wan C. · Materials · 2010 · 3 · 260610.3390/ma3042606 ↗
33. Hohnke D. K. · J. Appl. Phys. · 1974 · 45 · 89210.1063/1.1663334 ↗
34. Chen C.-L. · J. Mater. Chem. A · 2014 · 2 · 1117110.1039/C4TA01643B ↗