Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6
Source abstract
Abstract
A new thio-germanium sulfide Li 2 Ga 2 GeS 6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS 4, which is well-known as a promising infrared NLO material. The host structure is built of GaS 4 tetrahedra linked by corners to GeS 4 tetrahedra to create a 3D framework forming tunnels along the c -axis, in which the Li + ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2 Ga 2 GaS 6 is ∼200 times larger than that of α-SiO 2 . Unlike AgGaS 2 and AgGaGeS 4, Li 2 Ga 2 GeS 6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Crystal Structures and Properties · Photorefractive and Nonlinear Optics · Nonlinear Optical Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011-2300, Department of Chemistry, University of Houston, Houston, Texas 77204-5003, Texas Materials Institute, Department of Chemical Engineering, and The University of Texas at Austin, Austin, Texas 78712
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