journal article·2010-10-26

Nanostructural Transformation and Formation of Heterojunctions from Si Nanowires

Tai Lun Wong, Chun Cheng, Wei Li, Kwok Kwong Fung, Ning Wang

ACS Nano· Volume 4· Issue 10
Publisher page

Abstract

Si nanowires coated with Ni showed interesting structural transformation behaviors as observed by in situ transmission electron microscopy. Owing to the presence of the native oxide on Si nanowire surfaces, the Ni thin shells initially segregated into nanosized droplets on the oxide surfaces. The native oxide shells protected the Si cores from reacting with Ni at temperatures below 1350 °C. Ni started the reaction with Si nanowires preferentially at the defects or bending regions of the nanowires. Because the reaction temperature was sufficiently high, the structural transformation was extremely fast and completed within 0.1 s. The resulting nanowires were single crystalline NiSi(2), the most desirable Ni silicide structure for potential applications. Nanowire junctions of NiSi(2)/Si and nanowire-nanotube junctions of NiSi(2)/SiC have been obtained upon further annealing.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and The William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China

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