Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31 P, 77 Se and 17 O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Carbon and Quantum Dots Applications · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
Radboud University, Institute for Molecules and Materials, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands
EMAT Electron Microscopy for Materials Science, Department of Physics, University of Antwerp, Antwerp 2020, Belgium
Funding
Toegepaste en Technische Wetenschappen, NWO
References (36)
Show source-provided references
1. 10.1038/s41578-023-00596-410.1038/s41578-023-00596-4 ↗
2. 10.1002/smll.20200245410.1002/smll.202002454 ↗
3. 10.1021/acsenergylett.9b0282410.1021/acsenergylett.9b02824 ↗
4. 10.1038/s41586-019-1771-510.1038/s41586-019-1771-5 ↗
5. 10.1021/acsnano.2c0313810.1021/acsnano.2c03138 ↗
6. 10.20517/ss.2024.1910.20517/ss.2024.19 ↗
7. 10.1021/jacs.8b1290810.1021/jacs.8b12908 ↗
8. 10.1021/acsanm.8b0206310.1021/acsanm.8b02063 ↗
9. 10.1021/acsanm.3c0516710.1021/acsanm.3c05167 ↗
10. 10.1038/s41563-021-01119-810.1038/s41563-021-01119-8 ↗
11. 10.1021/acs.chemmater.8b0311710.1021/acs.chemmater.8b03117 ↗
12. 10.1021/acsanm.0c0281410.1021/acsanm.0c02814 ↗
13. 10.1038/s41467-022-35731-210.1038/s41467-022-35731-2 ↗
14. 10.1021/acsnano.4c0329010.1021/acsnano.4c03290 ↗
15. 10.1021/acs.chemmater.2c0296010.1021/acs.chemmater.2c02960 ↗
16. 10.1063/1.47885810.1063/1.478858 ↗
17. 10.1021/ja104673y10.1021/ja104673y ↗
18. 10.1021/ja307124m10.1021/ja307124m ↗
19. 10.1021/acs.chemmater.2c0280010.1021/acs.chemmater.2c02800 ↗
20. 10.1021/nl801692g10.1021/nl801692g ↗
21. 10.1021/cr000060n10.1021/cr000060n ↗
22. 10.1103/PhysRevLett.103.13680210.1103/PhysRevLett.103.136802 ↗
23. 10.1016/j.pnmrs.2008.10.00210.1016/j.pnmrs.2008.10.002 ↗
24. 10.1021/jacs.2c0299410.1021/jacs.2c02994 ↗
25. 10.1002/adma.20230362110.1002/adma.202303621 ↗
26. 10.1021/acs.analchem.1c0275910.1021/acs.analchem.1c02759 ↗
27. 10.1021/acs.nanolett.3c0263010.1021/acs.nanolett.3c02630 ↗
28. 10.1063/1.481232310.1063/1.4812323 ↗
29. 10.1351/PAC-REP-10-09-3110.1351/PAC-REP-10-09-31 ↗
30. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
31. 10.1103/PhysRevLett.78.139610.1103/PhysRevLett.78.1396 ↗
32. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
33. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
34. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
35. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
36. 10.1103/physrevb.76.02440110.1103/physrevb.76.024401 ↗