journal article·2024-02-06

Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization

Jingyuan Zhong, Ming Yang, Jianfeng Wang, Yaqi Li, Chen Liu, Dan Mu, Yundan Liu, Ningyan Cheng, Zhixiang Shi, Lexian Yang, Jincheng Zhuang, Yi Du, Weichang Hao

ACS Nano· Volume 18· Issue 5
Publisher page

Abstract

The confinement of electrons in one-dimensional (1D) space highlights the prominence of the role of electron interactions or correlations, leading to a variety of fascinating physical phenomena. The quasi-1D electron states can exhibit a unique spin texture under spin–orbit interaction (SOI) and thus could generate a robust spin current by forbidden electron backscattering. Direct detection of such 1D spin or SOI information, however, is challenging due to complicated techniques. Here, we identify an anomalous planar Hall effect (APHE) in the magnetotransport of quasi-1D van der Waals (vdW) topological materials as exemplified by Bi 4 Br 4, which arises from the quantum interference correction of 1D weak antilocalization (WAL) to the ordinary planar Hall effect and demonstrates a deviation from the usual sine and cosine curves. The occurrence of 1D WAL is correlated to the line-shape Fermi surface and persistent spin texture of (100) topological surface states of Bi 4 Br 4, as revealed by both our angle-resolved photoemission spectroscopy and first-principles calculations. By generalizing the observation of APHE to other non-vdW bulk materials, this work provides a possible characteristic of magnetotransport for identifying the spin/SOI information and quantum interference behavior of 1D states in 3D topological material.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics, Beihang University, Haidian District, Beijing 100191, China

Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China

Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

School of Physics and Key Laboratory of the Ministry of Education, Southeast University, Nanjing 211189, People’s Republic of China

State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China

Funding

National Key Research and Development Program of China · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China

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