journal article·2023-10-24

Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices

Changhyeon Yoo, Vivek Adepu, Sang Sub Han, Jung Han Kim, June-Chul Shin, Justin Cao, Junsung Park, Mohammad M. Al Mahfuz, Laurene Tetard, Gwan-Hyoung Lee, Dong-Kyun Ko, Parikshit Sahatiya, Yeonwoong Jung

ACS Nano· Volume 17· Issue 20
Publisher page

Abstract

Tin monosulfide (SnS) is a promising piezoelectric material with an intrinsically layered structure, making it attractive for self-powered wearable and stretchable devices. However, for practical application purposes, it is essential to improve the output and manufacturing compatibility of SnS-based piezoelectric devices by exploring their large-area synthesis principle. In this study, we report the chemical vapor deposition (CVD) growth of centimeter-scale two-dimensional (2D) SnS layers at temperatures as low as 200 °C, allowing compatibility with processing a range of polymeric substrates. The intrinsic piezoelectricity of 2D SnS layers directly grown on polyamides (PIs) was confirmed by piezoelectric force microscopy (PFM) phase maps and force-current corroborative measurements. Furthermore, the structural robustness of the centimeter-scale 2D SnS layers/PIs allowed for engraving complicated kirigami patterns on them. The kirigami-patterned 2D SnS layer devices exhibited intriguing strain-tolerant piezoelectricity, which was employed in detecting human body motions and generating photocurrents irrespective of strain rate variations. These results establish the great promise of 2D SnS layers for practically relevant large-scale device technologies with coupled electrical and mechanical properties.
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Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · 2D Materials and Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States

Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani Hyderabad Campus, Hyderabad, 500078, India

Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea

Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea

Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States

Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States

Physics Department, University of Central Florida, Orlando, Florida, 32816, United States

Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States

Funding

Ministry of Science and ICT, South Korea · National Research Foundation of Korea · Seoul National University · National Science Foundation

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