Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
Source abstract
Abstract
We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institut für Halbleitertechnik, Technische Universität Braunschweig, Germany
Solid State Physics/the Nanometer Structure Consortium, Lund University, Sweden
Institute for Nanoelectronics, Technische Universität München, Germany
Department of Energy Conversion and Storage, Technical University of Denmark, Denmark
Faculty of Chemistry, A. Mickiewicz University, Poznan, Poland
Physikalisch-Technische Bundesanstalt, Braunschweig, Germany
Polymer and Materials Chemistry, Lund University, Sweden
References (33)
Show source-provided references
1. Vilan A. · Adv. Mater. · 2010 · 22 · 14010.1002/adma.200901834 ↗
2. Wang W. · Nano Lett. · 2008 · 8 · 47810.1021/nl0725289 ↗
3. Aswal D. K. · Anal. Chim. Acta · 2006 · 568 · 8410.1016/j.aca.2005.10.027 ↗
4. DiBenedetto S. A. · Adv. Mater. · 2009 · 21 · 140710.1002/adma.200803267 ↗
5. Akkerman H. B. · J. Phys.: Condens. Matter · 2008 · 20 · 013001
6. Joachim C. · Proc. Natl. Acad. Sci. U.S.A. · 2005 · 102 · 880110.1073/pnas.0500075102 ↗
7. Moth-Poulsen K. · Nat. Nanotechnol. · 2009 · 4 · 55110.1038/nnano.2009.176 ↗
8. Reed M. A. · 2003
9. Tao N. J. · Nat. Nanotechnol. · 2006 · 1 · 17310.1038/nnano.2006.130 ↗
10. Cuevas J. C. · 201010.1142/7434 ↗
11. Cai L. T. · J. Phys. Chem. B · 2004 · 108 · 282710.1021/jp0361273 ↗
12. Ashwell G. J. · ACS Nano · 2010 · 4 · 740110.1021/nn102460z ↗
13. Corley D. A. · ACS Nano · 2010 · 4 · 187910.1021/nn901566v ↗
14. Bof Bufon C. C. · Nano Lett. · 2011 · 11 · 372710.1021/nl201773d ↗
15. Olsson L. Ö. · Phys. Rev. Lett. · 1996 · 76 · 362610.1103/PhysRevLett.76.3626 ↗
16. Stine R. · J. Electron Spectrosc. Relat. Phenom. · 2009 · 172 · 4210.1016/j.elspec.2009.02.001 ↗
17. Hang Q. · Nano Lett. · 2008 · 8 · 4910.1021/nl071888t ↗
18. Tanzer T. A. · Appl. Phys. Lett. · 1999 · 75 · 279410.1063/1.125152 ↗
19. Tyagi P. · J. Mater. Chem. · 2011 · 21 · 473310.1039/c0jm03291c ↗
20. Li T. · Adv. Mater. · 2010 · 22 · 28610.1002/adma.200900864 ↗
21. Prokopuk N. · J. Phys.: Condens. Matter · 2008 · 37 · 374116
22. Lieber C. M. · MRS Bull. · 2007 · 32 · 9910.1557/mrs2007.41 ↗
23. Björk M. T. · Nano Lett. · 2002 · 2 · 8710.1021/nl010099n ↗
24. Björk M. T. · Appl. Phys. Lett. · 2002 · 81 · 445810.1063/1.1527995 ↗
25. Søndergaard R. · J. Mater. Chem. · 2009 · 19 · 389910.1039/b823158c ↗
26. Petrovykh D. Y. · Surf. Sci. · 2003 · 523 · 23110.1016/S0039-6028(02)02411-1 ↗
27. Knoben W. · J. Phys. Chem. C · 2009 · 113 · 1833110.1021/jp9069543 ↗
28. Schvartzman M. · J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. · 2003 · 21 · 14810.1116/1.1532026 ↗
29. Simmons J. G. · J. Appl. Phys. · 1963 · 34 · 179310.1063/1.1702682 ↗
30. Luber S. M. · Small · 2007 · 3 · 28510.1002/smll.200600389 ↗
31. Danilov A. · Nano Lett. · 2008 · 8 · 110.1021/nl071228o ↗
32. Song H. · Nature · 2009 · 462 · 103910.1038/nature08639 ↗
33. Suyatin D. B. · Nanotechnology · 2007 · 18 · 10530710.1088/0957-4484/18/10/105307 ↗