DataVXACS NanoPaper
journal article·2022-09-27Open access

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

Tobias Vogel, Alexander Zintler, Nico Kaiser, Nicolas Guillaume, Gauthier Lefèvre, Maximilian Lederer, Anna Lisa Serra, Eszter Piros, Taewook Kim, Philipp Schreyer, Robert Winkler, Déspina Nasiou, Ricardo Revello Olivo, Tarek Ali, David Lehninger, Alexey Arzumanov, Christelle Charpin-Nicolle, Guillaume Bourgeois, Laurent Grenouillet, Marie-Claire Cyrille, Gabriele Navarro, Konrad Seidel, Thomas Kämpfe, Stefan Petzold, Christina Trautmann, Leopoldo Molina-Luna, Lambert Alff

ACS Nano· Volume 16· Issue 9
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Source abstract

Abstract

-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

Advanced Electron Microscopy Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany

CEA, LETI, Univ. Grenoble Alpes, 38000 Grenoble, France

CNRS-LTM, CEA, LETI, 38054 Grenoble, France

Fraunhofer IMPS, Center Nanoelectronic Technologies (CNT), 01109 Dresden, Germany

GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt, Germany

Institute of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany

Funding

Bundesministerium f??r Bildung und Forschung · Deutsche Forschungsgemeinschaft · European Commission · Electronic Components and Systems for European Leadership

References (82)

Show source-provided references
1. 10.1088/1361-6633/ab8f8610.1088/1361-6633/ab8f86 ↗
2. 10.1016/j.sse.2016.07.00610.1016/j.sse.2016.07.006 ↗
3. 10.1109/IMW.2018.838884510.1109/IMW.2018.8388845 ↗
4. 10.1002/aelm.20190048410.1002/aelm.201900484 ↗
5. 10.1002/adfm.20170043210.1002/adfm.201700432 ↗
6. 10.1063/1.363405210.1063/1.3634052 ↗
7. Mikolajick, T.; Schroeder, U.; Slesazeck, S., The Case for Ferroelectrics in Future Memory Devices. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp 1–3.10.1109/EDTM50988.2021.9420821 ↗
8. 10.1063/1.486465310.1063/1.4864653 ↗
9. 10.1143/APEX.2.06140110.1143/APEX.2.061401 ↗
10. 10.1002/adma.20090037510.1002/adma.200900375 ↗
11. 10.1088/0268-1242/31/11/11300110.1088/0268-1242/31/11/113001 ↗
12. 10.1016/j.sse.2015.04.00910.1016/j.sse.2015.04.009 ↗
13. Arnaud, F.; Zuliani, P.; Reynard, J. P.; Gandolfo, A.; Disegni, F.; Mattavelli, P.; Gomiero, E.; Samanni, G.; Jahan, C.; Berthelon, R.; Weber, O.; Richard, E.; Barral, V.; Villaret, A.; Kohler, S.; Grenier, J. C.; Ranica, R.; Gallon, C.; Souhaite, A.; Ristoiu, D.; Favennec, L.; Caubet, V.; Delmedico, S.; Cherault, N.; Beneyton, R.; Chouteau, S.; Sassoulas, P. O.; Vernhet, A.; Friec, Y. L.; Domengie, F.; Scotti, L.; Pacelli, D.; Ogier, J. L.; Boucard, F.; Lagrasta, S.; Benoit, D.; Clement, L.; Boivin, P.; Ferreira, P.; Annunziata, R.; Cappelletti, P. In Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory, 2018 IEEE International Electron Devices Meeting (IEDM), 1–5 Dec 2018; pp 18.4.1–18.4.4.10.1109/IEDM.2018.8614595 ↗
14. Sousa, G. N. V., Castellani, N.; Coué, M., Cueto, O.; Sabbione, C.; Noé, P.; Perniola, L.; Blonkowski, S.; Zuliani, P.; Annunziata, R. Operation Fundamentals in 12Mb Phase Change Memory Based on Innovative Ge-rich GST Materials Featuring High Reliability Performance. 2015 Symposium on VLSI Technology Digest of Technical Papers (VLSI Technology) 2015, T98–T99.10.1109/VLSIT.2015.7223708 ↗
15. 10.1063/1.487574810.1063/1.4875748 ↗
16. 10.1109/TNS.2013.228936910.1109/TNS.2013.2289369 ↗
17. 10.1109/TNS.2017.272198010.1109/TNS.2017.2721980 ↗
18. 10.1109/TNS.2019.290863710.1109/TNS.2019.2908637 ↗
19. 10.1109/TNS.2013.228551610.1109/TNS.2013.2285516 ↗
20. 10.1088/0957-4484/21/47/47520610.1088/0957-4484/21/47/475206 ↗
21. Kämpfe, T.; Vogel, T.; Olivo, R.; Lederer, M.; Kaiser, N.; Petzold, S.; Ali, T.; Lehninger, D.; Trautmann, C.; Alff, L.; Seidel, K. In Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films, 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), 19–23 July 2020; 2020; pp 1–3.10.1109/IFCS-ISAF41089.2020.9234942 ↗
22. Serra, A. L.; Vogel, T.; Lefevre, G.; Petzold, S.; Kaiser, N.; Bourgeois, G.; Cyrille, M.C.; Alff, L.; Trautmann, C.; Vallé, C.; Sylvain, D.; Charpin-Nicolle, C.; Navarro, G.; Nowak, E., Heavy Ions Radiation Effects on 4kb Phase-Change Memory. RADECS 2020, Oct 2020, Virtual Conference, France 2020, https://hal-cea.archives-ouvertes.fr/cea-03086407/document.10.1109/RADECS50773.2020.9857688 ↗
23. Rodgers, J.; Maimon, J.; Storey, T.; Lee, D.; Graziano, M.; Rockett, L.; Hunt, K., A 4-Mb Non-Volatile Chalcogenide Random Access Memory Designed for Space Applications: Project Status Update. 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), IEEE, 2008, 1–6.10.1109/NVMT.2008.4731183 ↗
24. Rodgers J. · 2010 IEEE Aerospace Conference · 2010 · 1
25. 10.1109/TNS.2008.200763910.1109/TNS.2008.2007639 ↗
26. 10.1109/TNS.2011.217171910.1109/TNS.2011.2171719 ↗
27. 10.1109/TNS.2014.236765510.1109/TNS.2014.2367655 ↗
28. 10.1016/j.jallcom.2013.03.24610.1016/j.jallcom.2013.03.246 ↗
29. Wyrwas, E. J. Proton Irradiation of the 16GB Intel Optane SSD No. GSFC-E-DAA-TN49014; NASA, 2017; No. GSFC-E-DAA-TN49014.
30. 10.1109/TNS.2012.220848010.1109/TNS.2012.2208480 ↗
31. 10.1109/TNS.2014.236253810.1109/TNS.2014.2362538 ↗
32. 10.1109/TNS.2012.222437710.1109/TNS.2012.2224377 ↗
33. 10.1109/LED.2018.283178410.1109/LED.2018.2831784 ↗
34. 10.35848/1882-0786/abfa7710.35848/1882-0786/abfa77 ↗
35. He, X.; Geer, R. E., Heavy Ion Radiation Effects on TiN HfO2 W RRAM. 2013 IEEE Aerospace Conference, IEEE 2013; 1–7.
36. 10.1557/adv.2017.42210.1557/adv.2017.422 ↗
37. 10.1109/TNS.2010.204576810.1109/TNS.2010.2045768 ↗
38. 10.1109/TNS.2021.307413910.1109/TNS.2021.3074139 ↗
39. 10.1109/TNS.2021.305342410.1109/TNS.2021.3053424 ↗
40. 10.1021/acsami.8b0791810.1021/acsami.8b07918 ↗
41. 10.1063/1.503694110.1063/1.5036941 ↗
42. 10.1021/nn405867p10.1021/nn405867p ↗
43. 10.1007/s10854-020-05049-010.1007/s10854-020-05049-0 ↗
44. 10.1007/s00339-018-2041-310.1007/s00339-018-2041-3 ↗
45. 10.1140/epjb/e2003-00236-x10.1140/epjb/e2003-00236-x ↗
46. 10.1016/j.nimb.2003.12.04610.1016/j.nimb.2003.12.046 ↗
47. 10.1103/PhysRevB.72.09411410.1103/PhysRevB.72.094114 ↗
48. 10.1016/j.actamat.2012.06.03010.1016/j.actamat.2012.06.030 ↗
49. Lang M. · 2020 · 48510.1016/B978-0-12-803581-8.11644-3 ↗
50. 10.1016/j.nimb.2011.12.06010.1016/j.nimb.2011.12.060 ↗
51. 10.1016/S0168-583X(99)00643-610.1016/S0168-583X(99)00643-6 ↗
52. 10.1007/s00339-018-2000-z10.1007/s00339-018-2000-z ↗
53. 10.1088/1361-6463/aa972310.1088/1361-6463/aa9723 ↗
54. 10.1109/LED.2019.293900210.1109/LED.2019.2939002 ↗
55. 10.1109/TNS.2021.308596210.1109/TNS.2021.3085962 ↗
56. 10.1021/acsami.1c0945110.1021/acsami.1c09451 ↗
57. 10.1021/acsnano.0c0334210.1021/acsnano.0c03342 ↗
58. 10.1021/am506581610.1021/am5065816 ↗
59. 10.1063/5.002553610.1063/5.0025536 ↗
60. 10.1016/j.nimb.2007.01.10610.1016/j.nimb.2007.01.106 ↗
61. 10.1016/j.nimb.2008.03.03710.1016/j.nimb.2008.03.037 ↗
62. 10.1016/j.nimb.2020.01.02510.1016/j.nimb.2020.01.025 ↗
63. 10.1016/j.nimb.2010.02.09110.1016/j.nimb.2010.02.091 ↗
64. 10.1063/1.186621910.1063/1.1866219 ↗
65. 10.1107/S160057671500473210.1107/S1600576715004732 ↗
66. 10.48328/tudatalib-89610.48328/tudatalib-896 ↗
67. 10.1021/acsnano.1c0698010.1021/acsnano.1c06980 ↗
68. Guillaume, N.; Lefèvre, G.; Charpin-Nicolle, C.; Grenouillet, L.; Vogel, T.; Kaiser, N.; Piros, E.; Petzold, S.; Trautmann, C.; Sylvain, D.; Vallée, C.; Alff, L.; Nowak, E., Heavy ion irradiation hardening study on 4kb arrays HfO2-based OxRAM. RADECS 2020 Annual European scientific and industrial forum on the effects of radiation effects on electronic and photonic materials, devices, circuits, sensors and systems, Paris (e-conference), France, 2020, https://hal-cea.archives-ouvertes.fr/cea-03326580/document.10.1109/RADECS50773.2020.9857730 ↗
69. 10.1080/1058458980820804510.1080/10584589808208045 ↗
70. 10.1038/s41467-022-28236-510.1038/s41467-022-28236-5 ↗
71. 10.1126/science.abk319510.1126/science.abk3195 ↗
72. 10.1080/0033757760823305010.1080/00337577608233050 ↗
73. 10.1080/1042015930821970910.1080/10420159308219709 ↗
74. 10.1557/PROC-1072-G02-0510.1557/PROC-1072-G02-05 ↗
75. 10.1038/srep0805010.1038/srep08050 ↗
76. 10.1016/j.sse.2021.10810110.1016/j.sse.2021.108101 ↗
77. 10.1063/1.235935410.1063/1.2359354 ↗
78. 10.1063/1.34718110.1063/1.347181 ↗
79. 10.1111/jmi.1206510.1111/jmi.12065 ↗
80. 10.1017/S143192762001989310.1017/S1431927620019893 ↗
81. https://zenodo.org/record/4923970#.YgP0E_gxkUF (accessed 2022-02-28).
82. https://opencv.org/ (accessed 2022-02-28).