Source abstract
Abstract
Two-dimensional crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge structures and uncover reconstruction behavior in bilayer phosphorene. We use in situ transmission electron microscopy (TEM) of phosphorene/graphene specimens at elevated temperatures to minimize surface contamination and reduce e-beam damage, allowing us to observe intrinsic edge configurations. The bilayer zigzag (ZZ) edge was found to be the most stable edge configuration under e-beam irradiation. Through first-principles calculations and TEM image analysis under various tilting and defocus conditions, we find that bilayer ZZ edges undergo edge reconstruction and so acquire closed, self-passivated edge configurations. The extremely low formation energy of the closed bilayer ZZ edge and its high stability against e-beam irradiation are confirmed by first-principles calculations. Moreover, we fabricate bilayer phosphorene nanoribbons with atomically sharp closed ZZ edges. The identified bilayer ZZ edges will aid in the fundamental understanding of the synthesis, degradation, reconstruction, and applications of phosphorene and related structures.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Department of Physics, Yonsei University, Seoul 03722, South Korea
Center for Nanomedicine, Institute for Basic Science, Seoul 03722, South Korea
Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi’an 710021, China
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
Funding
National Research Foundation of Korea · Institute for Basic Science · Yonsei Signature Research Cluster Program · Shaanxi Association for Science and Technology