Enhancing device characteristics of InP quantum dot LED through structural modification with polyethylene glycol blend
Source abstract
Abstract
This study explored the integration of polyethylene glycol (PEG) into InP-based quantum dot (QD) light-emitting diodes (LEDs). By 5 wt% of PEG 400 blended into the QD emission layer (EML), we achieved an enhancement in both current efficiency (100 %) and external quantum efficiency (91 %). X-ray reflectivity revealed significant morphological changes in the QD EML upon PEG incorporation, primarily manifesting as increased thickness in the dense surface region without affecting the total thickness. This adjustment influenced electron density distribution, impacting hole and electron flow. Overall, the addition of PEG not only improved the electrical properties of QD LEDs but also reshaped the internal morphology of the QD EML. Notably, the efficiency improvements observed rival those achieved by integrating traditional hole transport materials into QD EMLs.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (52)
Show source-provided references
1. Efficient all-solution processed quantum dot light emitting diodes based on inkjet printing technique10.1021/acsami.7b05381 ↗
2. Solution-processed, high-performance light-emitting diodes based on quantum dots10.1038/nature13829 ↗
3. Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures10.1038/nphoton.2011.171 ↗
4. Full-color capable light-emitting diodes based on solution-processed quantum dot layer stacking10.1039/C8NR00307F ↗
5. All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime10.1039/C9MH01053J ↗
6. Fully solution-processed tandem white quantum-dot light-emitting diode with an external quantum efficiency exceeding 25%10.1021/acsnano.8b02289 ↗
7. A general solvent selection strategy for solution processed quantum dots targeting high performance light-emitting diode10.1002/adfm.201603325 ↗
8. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer10.1038/370354a0 ↗
9. Cadmium-free quantum dots based violet light-emitting diodes: high-efficiency and brightness via optimization of organic hole transport layers10.1016/j.orgel.2015.06.032 ↗
10. Cadmium-free InP/ZnSeS/ZnS heterostructure-based quantum dot light-emitting diodes with a ZnMgO electron transport layer and a brightness of over 10 000 Cd M−210.1002/smll.201603962 ↗
11. Enhanced efficiency of InP-based red quantum dot light-emitting diodes10.1021/acsami.9b07437 ↗
12. Environmentally friendly InP-based quantum dots for efficient wide color gamut displays10.1021/acsenergylett.9b02851 ↗
13. Effects of ZnMgO electron transport layer on the performance of INP-based inverted quantum dot light-emitting diodes10.3390/nano11051246 ↗
14. Light-emitting electrochemical cells with polymer-blended InP/ZnSeS quantum dot active layer10.1002/adom.202001535 ↗
15. Composition-tailored ZnMgO nanoparticles for electron transport layers of highly efficient and bright InP-based quantum dot light emitting diodes10.1039/C9CC06882A ↗
16. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes10.1038/s41586-019-1771-5 ↗
17. Tuning Hot carrier dynamics of InP/ZnSe/ZnS quantum dots by shell morphology control10.1002/smll.202105492 ↗
18. Development of InP quantum dot-based light-emitting diodes10.1021/acsenergylett.9b02824 ↗
19. Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses10.1039/C8NR01286E ↗
20. Optical, electronic, and structural properties of uncoupled and close-packed arrays of InP quantum dots10.1021/jp981703u ↗
21. High-brightness blue inp quantum dot-based electroluminescent devices: the role of shell thickness10.1021/acs.jpclett.9b03567 ↗
22. High-efficiency green InP quantum dot-based electroluminescent device comprising thick-shell quantum dots10.1002/adom.201801602 ↗
23. InP-Based quantum dot light-emitting diode with a blended emissive layer10.1021/acsenergylett.1c00351 ↗
24. Effect of air exposure of ZnMgO nanoparticle electron transport layer on efficiency of quantum-dot light-emitting diodes10.1021/acsami.1c01898 ↗
25. Improved performance of inverted quantum dot light-emitting diodes by blending the small-molecule and polymer materials as hole transport layer10.1016/j.orgel.2020.105618 ↗
26. Improved device performance of solution-processed red-colored Cu–In–Zn–S-based quantum dot light-emitting diodes enabled by doping TCTA into the emitting layer10.1016/j.orgel.2020.105790 ↗
27. Correlation between the structural morphology and device characteristics of quantum dot based emission layer blended with small molecular hole transport material10.1016/j.apsusc.2021.151925 ↗
28. Highly Efficient deep blue Cd-free quantum dot light-emitting diodes by a p-type doped emissive layer10.1002/smll.202002109 ↗
29. Highly efficient quantum dot light-emitting diodes by inserting multiple poly(methyl methacrylate) as electron-blocking layers
30. Enhanced performance through trap states passivation in quantum dot light emitting diode
31. On the voltage behavior of quantum dot light-emitting diode
32. Effect of molecular weight of additives on the conductivity of PEDOT:PSS and efficiency for ITO-free organic solar cells10.1039/c3ta11726j ↗
33. Enhancing the performance of transparent and highly stretchable organic electrochemical transistors by acid treatment and copolymer blending of electrospun PEDOT:PSS fibers10.1039/D2TC01134D ↗
34. Highly stretchable PEDOT:PSS organic electrochemical transistors achieved via polyethylene glycol addition10.1088/2058-8585/ab5202 ↗
35. Improved performance of perovskite light-emitting device with urea modified PEDOT:PSS hole transport layer10.1016/j.matlet.2020.127878 ↗
36. Highly efficient inkjet printed flexible organic light-emitting diodes with hybrid hole injection layer
37. Highly efficient vacuum-evaporated CsPbBr3 perovskite light-emitting diodes with an electrical conductivity enhanced polymer-assisted passivation layer10.1021/acsami.1c05447 ↗
38. Efficiency and air-stability improvement of flexible inverted polymer solar cells using ZnO/Poly(Ethylene Glycol) hybrids as cathode buffer layers10.1021/am4013038 ↗
39. Enhancing the performance of blue quantum-dot light-emitting diodes through the incorporation of polyethylene glycol to passivate ZnO as an electron transport layer10.1039/D0RA03846F ↗
40. GIXSGUI: A MATLAB toolbox for grazing-incidence X-ray scattering data visualization and reduction, and indexing of buried three-dimensional periodic nanostructured films10.1107/S1600576715004434 ↗
41. Surface studies of solids by total reflection of X-rays10.1103/PhysRev.95.359 ↗
42. Aggregation induced emission behaviour in oleylamine acetone system and its application to get improved photocurrent from In2S3 quantum dots10.1038/s41598-020-76703-0 ↗
43. Aggregation induced red shift emission of phosphorus doped carbon dots10.1039/C7RA04781A ↗
44. Probing impact of interface mixing on the charge carrier dynamics of a solution-processed organic light emitting diode via impedance spectroscopy10.1039/D2NR05261J ↗
45. Effect of air exposure of ZnMgO nanoparticle electron transport layer on efficiency of quantum-dot light-emitting diodes10.1021/acsami.1c01898 ↗
46. Electrical and optical properties of low-bandgap oxide Zn2Mo3O8 for optoelectronic applications10.1016/j.tsf.2019.03.023 ↗
47. Effect of air exposure of ZnMgO nanoparticle electron transport layer on efficiency of quantum-dot light-emitting diodes10.1021/acsami.1c01898 ↗
48. Fourier Reconstruction of density profiles of thin films using anomalous X-ray reflectivity
49. Reconstruction of interfaces of periodic multilayers from X-ray reflectivity using a free-form approach10.1107/S160057671601044X ↗
50. Model-independent X-ray reflectivity fitting for structure analysis of poly(3-hexylthiophene) films10.1021/ma400147g ↗
51. Molecular stacking effect on small-molecular organic light-emitting diodes prepared with solution process10.1021/acsami.0c06597 ↗
52. Low-voltage organic transistors with carrier mobilities over 10 Cm2V–2s–1 using six-branched organic azide10.1021/acs.chemmater.2c02235 ↗