Transport in c-Si/Alq/Al structures
Source abstract
Abstract
Abstract In this paper, we present results on electronic transport in c-Si/Alq/Al structures. Specifically, we show that n + c-Si is an efficient electron injector into Alq. We also show that transport in these structures is injection limited.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (8)
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1. Tang · J. Appl. Phys. · 1989 · 65 · 361010.1063/1.343409 ↗
2. Burroughes · Nature · 1990 · 347 · 53910.1038/347539a0 ↗
3. Burrows · J. Appl. Phys. · 1996 · 79 · 799110.1063/1.362350 ↗
4. Barth · Phys. Rev. B · 1999 · 60 · 879110.1103/PhysRevB.60.8791 ↗
5. Ioannidis · Appl. Phys. Lett. · 1998 · 72 · 303810.1063/1.121533 ↗
6. A. Rose, in: Concepts in Photoconductivity and Allied Problems, Robert E. Kreiger Publishing Co., New York, 1978.
7. M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, NY, 1970.
8. S.M. Sze, in: Physics of Semiconductor Devices, Wiley, 1979, p. 382.