journal article·2001-05

Transport in c-Si/Alq/Al structures

K.L. Narasimhan, Anver Aziz

Synthetic Metals· Volume 122· Issue 1
Publisher page

Abstract

Abstract In this paper, we present results on electronic transport in c-Si/Alq/Al structures. Specifically, we show that n + c-Si is an efficient electron injector into Alq. We also show that transport in these structures is injection limited.
The source flagged this abstract for review. Check formulas and completeness against the original publication.
Source: openaire · Quality: needs review · Source record ↗
Source flags: short_text

Research context

OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (8)

Show source-provided references
1. Tang · J. Appl. Phys. · 1989 · 65 · 361010.1063/1.343409 ↗
2. Burroughes · Nature · 1990 · 347 · 53910.1038/347539a0 ↗
3. Burrows · J. Appl. Phys. · 1996 · 79 · 799110.1063/1.362350 ↗
4. Barth · Phys. Rev. B · 1999 · 60 · 879110.1103/PhysRevB.60.8791 ↗
5. Ioannidis · Appl. Phys. Lett. · 1998 · 72 · 303810.1063/1.121533 ↗
6. A. Rose, in: Concepts in Photoconductivity and Allied Problems, Robert E. Kreiger Publishing Co., New York, 1978.
7. M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, NY, 1970.
8. S.M. Sze, in: Physics of Semiconductor Devices, Wiley, 1979, p. 382.