journal article·2022-05-24Open access

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

Qingkai Qian, Wenjing Wu, Lintao Peng, Yuanxi Wang, Anne Marie Z. Tan, Liangbo Liang, Saban M. Hus, Ke Wang, Tanushree H. Choudhury, Joan M. Redwing, Alexander A. Puretzky, David B. Geohegan, Richard G. Hennig, Xuedan Ma, Shengxi Huang

ACS Nano· Volume 16· Issue 5

Abstract

The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. In this work, we demonstrate that defects created by remote N2 plasma exposure in single-layer WS2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N2 plasma exposure dose, which is strongest for WS2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Optoelectronic Technology and System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Funding

U.S. Department of Energy · National Science Foundation

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