Enhancing the Spin–Orbit Torque Efficiency by the Insertion of a Sub-nanometer β-W Layer
Source abstract
Abstract
Spin–orbit torque (SOT) efficiency is one of the key issues of spintronics. However, enhancing the SOT efficiency is usually limited by the positive correlation between resistivity and the spin Hall ratio, where a high resistivity often accompanies a large spin Hall ratio. Here, we demonstrate that sub-nanometer β-W intercalation has a considerable impact on the SOT efficiency in α-W (6 nm)/Co (8 nm)/Pt (3 nm) samples. The damping-like SOT efficiency per unit current density, ξDLj, of α-W (5.7 nm)/β-W (0.3 nm)/Co (8 nm)/Pt (3 nm) shows a ∼ 296% enhancement compared to that of the α-W/Co/Pt system. Meanwhile, a resistivity similar to that of α-W and the spin Hall ratio larger than β-W induce a giant damping-like SOT efficiency per applied electric field, ξDLE, which is about 12.1 times larger than that of β-W. Our findings will benefit the SOT devices by reducing energy consumption.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronics and Information Engineering, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China
Funding
Ministry of Science and Technology of the People's Republic of China · Central University Basic Research Fund of China · National Natural Science Foundation of China
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