journal article·2020-07-28

Topologically Nontrivial Phase-Change Compound GeSb2Te4

Munisa Nurmamat, Kazuaki Okamoto, Siyuan Zhu, Tatiana V. Menshchikova, Igor P. Rusinov, Vladislav O. Korostelev, Koji Miyamoto, Taichi Okuda, Takeo Miyashita, Xiaoxiao Wang, Yukiaki Ishida, Kazuki Sumida, Eike F. Schwier, Mao Ye, Ziya S. Aliev, Mahammad B. Babanly, Imamaddin R. Amiraslanov, Evgueni V. Chulkov, Konstantin A. Kokh, Oleg E. Tereshchenko, Kenya Shimada, Shik Shin, Akio Kimura

ACS Nano· Volume 14· Issue 7
Publisher page

Abstract

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Topological Materials and Phenomena · Nonlinear Optical Materials Studies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physical Sciences, Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan

Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan

Tomsk State University, 634050 Tomsk, Russia

Departamento de F́ısica de Materiales UPV/EHU, CFM-MPC UPV/EHU, 20080 San Sebastían/Donostia, Basque Country, Spain

St. Petersburg State University, Universitetskaya nab., 7/9, 199034 St. Petersburg, Russia

Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan

Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan

Materials Sciences Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China

Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan

Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan

Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143, Baku, Azerbaijan

Baku State University, AZ1148 Baku, Azerbaijan

Donostia International Physics Center (DIPC), 20018 San Sebastían/Donostia, Basque Country, Spain

V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Koptyuga pr. 3, Novosibirsk 630090, Russia

Novosibirsk State University, ul. Pirogova 2, Novosibirsk 630090, Russia

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent_eva 13, Novosibirsk 630090, Russia

Funding

Russian Science Foundation · ?????????? ???? ??????????????? ???????????? (????) · Saint Petersburg State University · Tomsk State University · Japan Society for the Promotion of Science · Ministry of Education and Science of the Russian Federation

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