journal article·2023-02-28

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Yuning Wang, Yipu Qu, Yu Xu, Didi Li, Zhengqian Lu, Jianjie Li, Xujun Su, Guobin Wang, Lin Shi, Xionghui Zeng, Jianfeng Wang, Bing Cao, Ke Xu

ACS Nano· Volume 17· Issue 4
Publisher page

Abstract

Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China

School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan450001, China

Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China

School of Physical Science and Technology, Shanghai Tech University, Shanghai201210, China

School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu215006, China

Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu215006, China

Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China

School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng224051, China

Funding

National Natural Science Foundation of China

References (47)

Show source-provided references
1. 10.1126/science.119540310.1126/science.1195403 ↗
2. 10.1002/adma.20110240710.1002/adma.201102407 ↗
3. 10.1002/adma.20160189410.1002/adma.201601894 ↗
4. 10.1021/acsami.7b1449410.1021/acsami.7b14494 ↗
5. 10.1038/s41377-022-00756-110.1038/s41377-022-00756-1 ↗
6. 10.1016/j.jmst.2020.02.08410.1016/j.jmst.2020.02.084 ↗
7. 10.1038/nature1097010.1038/nature10970 ↗
8. 10.1002/adma.20170183810.1002/adma.201701838 ↗
9. 10.7567/1882-0786/aaeede10.7567/1882-0786/aaeede ↗
10. 10.1039/C7RA03590J10.1039/C7RA03590J ↗
11. 10.3390/ma1112246410.3390/ma11122464 ↗
12. 10.1126/science.113720110.1126/science.1137201 ↗
13. 10.1038/nature0771910.1038/nature07719 ↗
14. 10.1002/adma.20130590910.1002/adma.201305909 ↗
15. 10.1002/adma.20110382910.1002/adma.201103829 ↗
16. 10.1016/j.susc.2014.11.02010.1016/j.susc.2014.11.020 ↗
17. 10.1038/am.2017.11810.1038/am.2017.118 ↗
18. 10.1021/nl901572a10.1021/nl901572a ↗
19. 10.1039/C7NR06684H10.1039/C7NR06684H ↗
20. 10.1038/nmat322810.1038/nmat3228 ↗
21. 10.1038/nature2205310.1038/nature22053 ↗
22. 10.1038/s41563-018-0176-410.1038/s41563-018-0176-4 ↗
23. 10.1039/C8NR08084D10.1039/C8NR08084D ↗
24. 10.1088/1361-6463/abe50010.1088/1361-6463/abe500 ↗
25. 10.1021/acsnano.1c0329610.1021/acsnano.1c03296 ↗
26. 10.1063/5.006423210.1063/5.0064232 ↗
27. 10.1038/s41586-020-1939-z10.1038/s41586-020-1939-z ↗
28. 10.1063/1.506454210.1063/1.5064542 ↗
29. 10.1088/1361-6528/ab450110.1088/1361-6528/ab4501 ↗
30. 10.1021/acs.nanolett.1c0067310.1021/acs.nanolett.1c00673 ↗
31. 10.1021/acsami.1c1892610.1021/acsami.1c18926 ↗
32. 10.1021/acs.nanolett.9b0269610.1021/acs.nanolett.9b02696 ↗
33. 10.1038/s41467-021-22784-y10.1038/s41467-021-22784-y ↗
34. 10.1002/ange.20120495810.1002/ange.201204958 ↗
35. 10.1002/anie.20140952410.1002/anie.201409524 ↗
36. 10.1021/nn202578610.1021/nn2025786 ↗
37. 10.1002/adma.20180734510.1002/adma.201807345 ↗
38. 10.1103/PhysRevB.36.103210.1103/PhysRevB.36.1032 ↗
39. 10.1016/0167-9317(84)90057-110.1016/0167-9317(84)90057-1 ↗
40. 10.1021/nl300554t10.1021/nl300554t ↗
41. 10.1038/s41565-020-0633-510.1038/s41565-020-0633-5 ↗
42. 10.1557/JMR.1996.007110.1557/JMR.1996.0071 ↗
43. 10.1021/acsanm.0c0165610.1021/acsanm.0c01656 ↗
44. 10.1002/adfm.20140096010.1002/adfm.201400960 ↗
45. 10.1063/1.36326410.1063/1.363264 ↗
46. 10.1016/j.jcrysgro.2020.12558810.1016/j.jcrysgro.2020.125588 ↗
47. 10.1063/1.194736710.1063/1.1947367 ↗