journal article·2019-10-22Open access

Enhanced Tunneling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene

Yongping Liao, Kimmo Mustonen, Semir Tulić, Viera Skákalová, Sabbir A. Khan, Patrik Laiho, Qiang Zhang, Changfeng Li, Mohammad R. A. Monazam, Jani Kotakoski, Harri Lipsanen, Esko I. Kauppinen

ACS Nano· Volume 13· Issue 10

Abstract

Transparent and conductive films (TCFs) are of great technological importance. Their high transmittance, electrical conductivity, and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for the raw material for TCFs. Despite the ballistic transport in individual SWCNTs, electrical conductivity of SWCNT networks is limited by low efficiency of charge tunneling between the tube elements. Here, we demonstrate that the nanotube network sheet resistance at high optical transmittance is decreased by more than 50% when fabricated on graphene. This is a comparable improvement as that obtained through gold chloride (AuCl3) doping. However, while Raman spectroscopy reveals substantial changes in spectral features of AuCl3 doped nanotubes, this does not occur with graphene. Instead, temperature-dependent transport measurements indicate that a graphene substrate reduces the tunneling barrier heights, while its parallel conductivity contribution is almost negligible. Finally, we show that combining the graphene substrate and AuCl3 doping, brings the SWCNT thin film sheet resistance down to 36 Ω/□.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Carbon Nanotubes in Composites · Graphene research and applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto, Finland

Faculty of Physics, University of Vienna, 1090 Vienna, Austria

Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

Department of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, Finland

Funding

Austrian Science Fund · Academy of Finland

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