Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
Source abstract
Abstract
We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ∼100 meV of the Dirac point, well into the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics, Monash University, Clayton, VIC 3800, Australia
Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, United States
Australian Synchrotron, Clayton, VIC 3168, Australia
Department of Physics, La Trobe University, Bundoora, VIC 3086, Australia
National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
References (32)
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