Strain-Mediated Spin–Orbit Torque Enhancement in Pt/Co on Flexible Substrate
Source abstract
Abstract
Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406
MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072, China
Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603
Department of Physics and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546
Funding
Economic Development Board - Singapore · Agency for Science, Technology and Research · Ministry of Education of the People's Republic of China · National Research Foundation Singapore
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