Multi-functionality in de-doped poly 3-methylthiophene memristor device
Source abstract
Abstract
Multi-functional devices are the recent trends in research, as they are cost-effective and reduce e-waste. In this study, detailed current-voltage measurement is performed on electro-polymerized Poly 3-methylthiophene (P3MT) thin film sandwiched between stainless steel (SS) and silver (Ag) electrodes, and the fabricated two-terminal device consisting of geometry SS/P3MT/Ag. Systematic and comparative measurements on partially doped P3MT devices with three dopants (TBAPF 6, LiClO 4 & TBABF 4 ) helped in realizing multi-functionality. In all the devices the following multifunctional features are demonstrated: negative differential resistance (NDR), sweep voltage-controlled resistive switching, analog memory, and synaptic plasticity. Charge transport in all the devices is modeled based on charge accumulation, trapping, and de-trapping of injected carriers.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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