journal article·2003-04-01

Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilyl)methane. 2. Property−Structure Relationships for Resulting Silicon−Carbon Films

A. M. Wróbel, A. Walkiewicz-Pietrzykowska, D. M. Bieliński, J. E. Klemberg-Sapieha, Y. Nakanishi, T. Aoki, Y. Hatanaka

Chemistry of Materials· Volume 15· Issue 8
Publisher page

Abstract

The physical, mechanical, and optical properties of amorphous hydrogenated silicon−carbon (a-Si:C:H) films produced by remote hydrogen plasma chemical vapor deposition (RHP−CVD) from (dimethylsilyl)(trimethylsilyl)silane have been investigated in relation to their chemical structure. The a-Si:C:H films deposited at different substrate temperatures were characterized in terms of their density, adhesion to a substrate, hardness, elastic modulus, friction coefficient, refractive index, and optical band gap. The atomic concentration ratio Si/C, controlled by the substrate temperature, appears to be an important structural parameter strongly influencing properties of the film. On the basis of the results of these studies, reasonable property−structure relationships have been determined.
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Research context

OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Polymers, Faculty of Chemistry, Technical University of Łódź, PL-90924 Łódź, Poland

Groupe des Couches Minces and Department of Engineering Physics, Ecole Polytechnique, Montreal, Quebec H3C 3A7, Canada

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