p-Si/DNA photoconductive diode for optical sensor applications
Source abstract
Abstract
Abstract The junction parameters of Al/ p -Si/Ag and Al/ p -Si/DNA/Ag diodes were studied using current–voltage ( I – V ), capacitance–voltage ( C – V ), and capacitance–frequency ( C – f ) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/ p -Si/DNA/Ag diode is better than that of Al/ p -Si/Ag diode. The ideality factor and barrier height values of the Al/ p -Si/DNA/Ag diode were obtained to be 1.2 ± 0.1 and 0.56 ± 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p -Si/DNA junction could be used as an optical sensor.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Advanced biosensing and bioanalysis techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. Spoerke · Appl. Phys. Lett. · 2009 · 95 · 21350610.1063/1.3232231 ↗
2. Yakuphanoglu · Synth. Met. · 2009 · 159 · 31110.1016/j.synthmet.2008.10.003 ↗
3. Soylu · Thin Solid Films · 2011 · 519 · 195010.1016/j.tsf.2010.10.030 ↗
4. Gullu · Solar Energy Mater. Solar Cells · 2008 · 92 · 120510.1016/j.solmat.2008.04.009 ↗
5. Gullu · J. Alloys Compd. · 2011 · 509 · 57110.1016/j.jallcom.2010.09.146 ↗
6. Gullu · Microelectron. Eng. · 2008 · 85 · 225010.1016/j.mee.2008.07.003 ↗
7. Okur · Microelectron. Eng. · 2009 · 86 · 230510.1016/j.mee.2009.04.017 ↗
8. Giese · Nature · 2001 · 412 · 31810.1038/35085542 ↗
9. Porath · Nature · 2000 · 403 · 63510.1038/35001029 ↗
10. Endres · Rev. Mod. Phys. · 2004 · 76 · 19510.1103/RevModPhys.76.195 ↗
11. Braun · Nature · 1998 · 391 · 77510.1038/35826 ↗
12. Hwang · Appl. Phys. Lett. · 2002 · 81 · 113410.1063/1.1498862 ↗
13. Heath · Science · 1998 · 280 · 171610.1126/science.280.5370.1716 ↗
14. Muyzer · Appl. Environ. Microbiol. · 1993 · 59 · 69510.1128/AEM.59.3.695-700.1993 ↗
15. Sze · 1979
16. Gupta · Mater. Chem. Phys. · 2004 · 86 · 27910.1016/j.matchemphys.2004.03.003 ↗
17. Karatas · Nucl. Instrum. Methods A · 2006 · 566 · 58410.1016/j.nima.2006.07.054 ↗
18. Yakuphanoglu · Mater. Sci. Semicond. Proc. · 2010 · 13 · 13710.1016/j.mssp.2010.05.005 ↗
19. Gullu · Microelectron. Eng. · 2010 · 87 · 64810.1016/j.mee.2009.09.001 ↗
20. Gullus · Appl. Surf. Sci. · 2008 · 254 · 517510.1016/j.apsusc.2008.02.019 ↗
21. Norde · J. Appl. Phys. · 1979 · 50 · 505210.1063/1.325607 ↗
22. Kazukauskas · Opt. Mater. · 2010 · 32 · 162910.1016/j.optmat.2010.05.014 ↗
23. Kazim · Physica B · 2007 · 393 · 31010.1016/j.physb.2007.01.028 ↗
24. Yakuphanoglu · Microelectron. Eng. · 2010 · 87 · 3010.1016/j.mee.2009.05.012 ↗
25. Yakuphanoglu · J. Alloys Compd. · 2010 · 494 · 45110.1016/j.jallcom.2010.01.075 ↗
26. Nicollian · Bell Syst. Tech. J. · 1967 · 46 · 105510.1002/j.1538-7305.1967.tb01727.x ↗
27. Dokme · Microelectron. Reliab. · 2010 · 50 · 3910.1016/j.microrel.2009.09.005 ↗
28. Hill · Solid State Electron. · 1980 · 23 · 98710.1016/0038-1101(80)90064-7 ↗
29. Karatas · Vacuum · 2004 · 74 · 4510.1016/j.vacuum.2003.11.006 ↗