Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

Abstract The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ), space charge region width (WD), interface state density (Nss), series resistance (Rs), acceptor concentration (NA) of the Au/Poly(4-vinyl phenol)/p-Si structure have been extracted from the current–voltage (I–V), frequency dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. It is pointed out that the interface states lead to deviation of the ideality factor value from 1 and frequency dispersion of the C–V characteristics. Nss profiles as a function of ( E s s − E v ) obtained using I–V and low frequency C–V measurements are in good agreement. Nss values varying between 1012 and 1013 eV−1 cm−2 mean that Poly(4-vinyl phenol) is a candidate for insulator layer forming on Si as powerful as SiN4, SnO2, TiO2.