Guided Assembly of Gold Colloidal Nanoparticles on Silicon Substrates Prepatterned by Charged Particle Beams
Source abstract
Abstract
Colloidal gold nanoparticles represent technological building blocks which are easy to fabricate while keeping full control of their shape and dimensions. Here, we report on a simple two-step maskless process to assemble gold nanoparticles from a water colloidal solution at specific sites of a silicon surface. First, the silicon substrate covered by native oxide is exposed to a charged particle beam (ions or electrons) and then immersed in a HF-modified solution of colloidal nanoparticles. The irradiation of the native oxide layer by a low-fluence charged particle beam causes changes in the type of surface-terminating groups, while the large fluences induce even more profound modification of surface composition. Hence, by a proper selection of the initial substrate termination, solution pH, and beam fluence, either positive or negative deposition of the colloidal nanoparticles can be achieved.
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Research context
OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Quantum Dots Synthesis And Properties · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic
CEITEC BUT, Brno University of Technology, Technická 10, 616 69 Brno, Czech Republic
FEI Company, Podnikatelská 6, 612 00 Brno, Czech Republic
Institut für Angewandte Physik, Technische Universität Wien, A-1040 Wien, Austria
References (51)
Show source-provided references
1. Manandhar P. · Nano Lett. · 2010 · 10 · 212610.1021/nl100747w ↗
2. Schmid H. · Nano Lett. · 2012 · 12 · 69910.1021/nl2035964 ↗
3. Sutter E. · Nano Lett. · 2008 · 8 · 41110.1021/nl0719630 ↗
4. Huang Z. · Adv. Mater. · 2010 · 23 · 28510.1002/adma.201001784 ↗
5. Oh Y. · Nano Lett. · 2012 · 12 · 204510.1021/nl300141k ↗
6. Halas N. J. · Chem. Rev. · 2011 · 111 · 391310.1021/cr200061k ↗
7. Wei Q.-H. · Nano Lett. · 2004 · 4 · 106710.1021/nl049604h ↗
8. Krenn J. R. · J. Microsc. · 2001 · 202 · 12210.1046/j.1365-2818.2001.00819.x ↗
9. Lal S. · Nat. Photonics · 2007 · 1 · 64110.1038/nphoton.2007.223 ↗
10. Albaladejo S. · Nano Lett. · 2011 · 11 · 459710.1021/nl201996t ↗
11. Morag A. · Adv. Mater. · 2011 · 23 · 432710.1002/adma.201101290 ↗
12. Lin H.-Y. · Adv. Funct. Mater. · 2007 · 17 · 318210.1002/adfm.200601180 ↗
13. Kramer R. K. · Nanotechnology · 2010 · 21 · 14530710.1088/0957-4484/21/14/145307 ↗
14. Städler B. · Nanotechnology · 2007 · 18 · 15530610.1088/0957-4484/18/15/155306 ↗
15. Lalander C. · ACS Nano · 2010 · 4 · 615310.1021/nn101431k ↗
16. Coskun U. C. · Appl. Phys. Lett. · 2008 · 93 · 12310110.1063/1.2981705 ↗
17. Jiang L. · Small · 2009 · 5 · 281910.1002/smll.200900770 ↗
18. Gilles S. · Nanotechnology · 2011 · 22 · 29530110.1088/0957-4484/22/29/295301 ↗
19. Ma L.-C. · Nano Lett. · 2007 · 7 · 43910.1021/nl062727c ↗
20. Fustin C.-A. · Langmuir · 2004 · 20 · 911410.1021/la0489413 ↗
21. Nidetz R. · Nanotechnology · 2012 · 23 · 04560210.1088/0957-4484/23/4/045602 ↗
22. Jiang L. · ACS Nano · 2011 · 5 · 828810.1021/nn202967f ↗
23. Tzeng S.-D. · Adv. Mater. · 2006 · 18 · 114710.1002/adma.200501542 ↗
24. Barry C. R. · Nano Lett. · 2005 · 5 · 207810.1021/nl0511972 ↗
25. Ressier L. · IEEE Trans. Nanotechnol. · 2009 · 8 · 48710.1109/TNANO.2009.2016089 ↗
26. Palleau E. · ACS Nano · 2011 · 5 · 422810.1021/nn2011893 ↗
27. Onses M. S. · ACS Nano · 2011 · 5 · 789910.1021/nn2021277 ↗
28. Mikkelsen A. · Nanotechnology · 2005 · 16 · 235410.1088/0957-4484/16/10/060 ↗
29. Novotny, L.; Hecht, J.Principles of Nano-optics;Cambridge University Press:New York, 2006; pp403–406.10.1017/CBO9780511813535 ↗
30. Torchinsky I. · Appl. Phys. Lett. · 2010 · 96 · 09310610.1063/1.3298356 ↗
31. Fudouzi H. · Adv. Mater. · 2002 · 14 · 164910.1002/1521-4095(20021118)14:22<1649::AID-ADMA1649>3.0.CO;2-Z ↗
32. Fudouzi H. · J. Nanopart. Res. · 2001 · 3 · 19310.1023/A:1017903123384 ↗
33. Shahmoon A. · Microelectron. Eng. · 2010 · 87 · 136310.1016/j.mee.2009.12.031 ↗
34. Busnanina A. · 2008 · 186
35. Guhathakurta S. · J. Electrochem. Soc. · 2007 · 154 · P13610.1149/1.2779951 ↗
36. Pokrovsky O. S. · J. Colloid Interface Sci. · 2006 · 296 · 18910.1016/j.jcis.2005.09.001 ↗
37. Duval Y. · J. Phys. Chem. B · 2002 · 106 · 293710.1021/jp012818s ↗
38. Morita M. · J. Appl. Phys. · 1990 · 68 · 127210.1063/1.347181 ↗
39. Ward J. W. · J. Vac. Sci. Technol., B · 1988 · 6 · 209010.1116/1.584117 ↗
40. Stevens-Kalceff M. A. · J. Phys. D: Appl. Phys. · 2009 · 42 · 14511710.1088/0022-3727/42/14/145117 ↗
41. Verdaguer A. · Langmuir · 2007 · 23 · 969910.1021/la700893w ↗
42. Hopf T. · J. Phys.: Condens. Matter · 2008 · 20 · 415205
43. Moberly Chan W. J. · MRS Bull. · 2007 · 32 · 42410.1557/mrs2007.66 ↗
44. Lugstein A. · J. Vac. Sci. Technol., A · 2003 · 21 · 164410.1116/1.1590964 ↗
45. Spoldi G. · Microelecron. Eng. · 2009 · 86 · 54810.1016/j.mee.2009.01.003 ↗
46. Rommel M. · J. Vac. Sci. Technol., B · 2010 · 28 · 59510.1116/1.3431085 ↗
47. Palko J. W. · IEEE Trans. Nucl. Sci. · 2008 · 55 · 299210.1109/TNS.2008.2006751 ↗
48. Rezek B. · Appl. Phys. Lett. · 2003 · 83 · 176410.1063/1.1606872 ↗
49. Zhang, X. G.Electrochemistry of Silicon and Its Oxide;Kluwer Academic Publishers:New York, 2001; pp70–71.
50. Botman A. · J. Vac. Sci. Technol., B · 2008 · 26 · 246010.1116/1.2976576 ↗
51. Utke I. · J. Vac. Sci. Technol., B · 2008 · 26 · 119710.1116/1.2955728 ↗