Impact of the annealing temperature on the structural, morphology and optical properties of bilayer thin films In/Se prepared by thermal evaporation method
Source abstract
Abstract
Thermal evaporation in a high vacuum was utilized under a pressure of (10 -5 m bar) to deposit indium selenium (In/Se) multilayer thin films on a glass substrate with a constant overall thickness of (350 nm). For (100,300°C)annealing temperatures results of (XRD ) showed the appearance of the two compounds (In2Se3 ) and (In/Se ), while the morphological tests showed that films had uniform and homogeneous surfaces free of voids and islands and spectral analysis (Uv.-Vis. ) showed to anneal temperatures affect grain formation and grain splitting in the film. Increased annealing led to an increase in absorbance while decreasing the energy gap noting that the Hall effect tests showed that the prepared compound is of the type n-type.
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Quantum Dots Synthesis And Properties
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